Tunable Linearity of High‐Performance Vertical Dual‐Gate vdW Phototransistors

Layered 2D semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve performance, photogating, photoconductive, photovoltaic, photothermoelectric, other effects used phototransistors photodiodes made with or hybrid structures. However, it is difficult achieve the desired high responsivity linear photoresponse simultaneously a monopolar conduction channel p–n junction. Here, dual-channel ambipolar multilayer WSe2 presented by employing device concept of dual-gate phototransistor, where p-type n-type channels are produced same semiconductor using opposite dual-gating. It possible tune photoconductive gain vertical electric field, so that constant respect light intensity—a photoresponse, ≈2.5 × 104 A W−1. Additionally, 1/f noise kept at low level under dual-gating reduction current carrier fluctuation, resulting detectivity ≈2 1013 Jones regime. The performance phototransistor offer possibility achieving high-resolution quantitative detection layered semiconductors.